Home > All news > Industry news > Infineon Signed a Strategic Agreement with Resonac to Promote Silicon Carbide Production Capacity Grow Rapidly
芯达茂F广告位 芯达茂F广告位

Infineon Signed a Strategic Agreement with Resonac to Promote Silicon Carbide Production Capacity Grow Rapidly

On January 31st, it was reported that to continuously expand silicon carbide (SiC) capacity, Infineon announced signed a for many years supply and cooperation agreement with Resonac to supplement and extend their agreement from 2021. The new contract will deepen the long-term cooperation between the two parties in the supply of SiC materials, and Resonac will supply double-digit SiC wafers in Infineon's estimated demand in the next 10 years.

According to the data, Resonac is a chemical giant with a history of 84 years (its predecessor was Showa Denko), and is in a leading position in the market of key semiconductor packaging materials such as copper clad laminate, photosensitive film and SiC epitaxial wafer. At present, it aims to increase the proportion of chip material revenue to total sales from 31% in 2021 to 45% by 2030.

It is reported that Resonac will first supply 6-inch SiC wafers and will transition to 8-inch SiC wafers during the contract period. Infineon will also provide Resonac with IP; on SiC material technology; The cooperation between the two parties will contribute to the stability of the supply chain and provide assistance for the rapid growth of the emerging semiconductor material SiC. 

 

 

Peter Wawer, president of Infineon Industrial Power Control Division, said that the fields of renewable energy generation, energy storage, electric travel and basic equipment will usher in huge business opportunities in the next few years. Infineon is doubling its investment in silicon carbide technology and product portfolio, and providing a strong boost to Infineon through its partnership with Resonac.

At present, the company is actively expanding the production capacity of SiC devices in order to achieve the goal of 30% market share by 2030. Infineon's SiC capacity is expected to increase tenfold by 2027, while the new plant in Kulim, Malaysia is scheduled to start production in 2024. Angelique van der Burg, Infineon's purchasing chief, stressed that SiC demand is growing rapidly, so Infineon is greatly expanding its production capacity to prepare for such development, and decided to deepen its cooperation with Resonac and strengthen its cooperative relationship.

Resonac plans to increase the output of silicon carbide epitaxial wafers to 50,000 wafers per month by 2026, which is about five times the current output. By 2025, mass production of 8-inch silicon carbide substrates will be started, and more semiconductor chips will be cut to improve production efficiency.

 

Infineon signed a strategic agreement with Resonac to promote the rapid growth of silicon carbide production capacity-China.exportsemi.com

Related news recommendations

Login

Register

Login
{{codeText}}
Login
{{codeText}}
Submit
Close
Subscribe
ITEM
Comparison Clear all