Samsung has started mass production of its ninth-generation V-NAND 1Tb TLC products, according to a report by Korean coal ETNews. This move not only marks another leap in 3D NAND flash memory technology for Samsung, but also sets a new benchmark for the industry as a whole.
"We are excited to launch Samsung's first 9th generation V-NAND, which will have the opportunity to drive future applications by leaps and bounds." SungHoi Hur, Head of Flash Memory Products and Technology at Samsung Electronics, said, "In order to meet the ever-evolving demand for flash memory, Samsung has continued to push the boundaries of the cell architecture and operating scheme of this product. With the latest V-NAND, Samsung will continue to innovate in the high-performance, high-density SSD market to meet the demands of the future AI era."
Samsung's ninth-generation V-NAND utilizes advanced channel hole etching technology, a technology that has been used to significantly improve production efficiency. Compared to the previous generation, the bit density of the ninth-generation V-NAND has increased by approximately 50 percent, thanks to Samsung's smallest cell size and thinnest stack thickness. In addition, the application of new technical features such as cell interference and cell life extension has further improved product quality and reliability.
The 9th generation V-NAND is equipped with the next-generation NAND flash interface "Toggle 5.1", which enables a 33% increase in data input/output speeds up to 3.2 gigabits per second (Gbps). At the same time, Samsung has made significant progress in low-power design, with a 10% reduction in power consumption for the ninth generation of V-NAND. Reducing energy consumption and carbon emissions has become a customer requirement, which is an important advancement for future low-energy applications.
To consolidate its position in the high-performance SSD market, Samsung plans to expand its support for PCle 5.0. In addition, Samsung plans to begin mass production of quad-level cell (QLC) ninth-generation V-NAND in the second half of this year, which will provide the market with more high-performance, low-cost storage solutions.
Samsung's ninth-generation V-NAND memory has a stacked layer count of 290, and semiconductor industry TechInsights predicts that Samsung's tenth-generation V-NAND flash is expected to reach 430 layers. This prediction, if realized, will further consolidate Samsung's industry-leading position in storage density and production efficiency.
