Infineon Technologies is reportedly supplying its power semiconductor devices to FOX-ess in Shanghai, China, for the manufacture of inverters and energy storage systems. Specifically, Infineon will supply FOX-ess with 1200V CoolSic MOSFETs with EiceDRIVER gate drivers, which will be used in industrial energy storage systems. In addition, Makita Energy's string photovoltaic (PV) inverters will also utilize Infineon's IGBT7 H7 1200V power semiconductor devices.
Infineon points out that the global market for photovoltaic energy storage systems (PV-ES) has grown rapidly in recent years. With the intensification of competition in the PV-ES market, it has become particularly critical to improve power density, and how to improve the efficiency and power density of energy storage applications has become the focus of industry attention. Infineon emphasizes that its CoolSic MOSFET 1200V and IGBT 7 1200V series of power semiconductor devices, using the latest semiconductor technology and design concepts, are tailored to meet the needs of industrial applications.
Thanks to the strong support of Infineon's advanced components, FOX-ess's products have achieved significant improvements in reliability and efficiency, which has become an important driving force for FOX-ess's development. Zhu Jingcheng, Chairman of FOX-ess, commented, "Infineon's technical support and product quality have not only strengthened our competitiveness in the market, but also helped us to expand our business in the market."
Infineon claims that its CoolSic MOSFETs 1200V products, with their high power density, are able to reduce energy loss by 50 percent and provide about 2 percent additional energy without increasing the size of the battery, which is of particular importance for energy storage solutions seeking high performance, lightweight and compact design. The H3PRO series from Makita Energy has an energy efficiency of up to 98.1% and excels in electromagnetic compatibility (EMC), advantages that have led to the H3PRO series winning rapid sales growth in the global market.
For its part, Infineon says that its TRENCHSTOP IGBT7 H7 650V/1200V series of semiconductor devices have lower losses, which helps to improve the overall efficiency and power density of inverters. In high-power inverter projects, discrete devices in high-current die packages with current carrying capacity of more than 100A can reduce the number of IGBTs used in parallel and replace IGBT module solutions, further improving system reliability and reducing costs. In addition, the H7 series has become a benchmark in the industry with its superior performance and enhanced resistance to moisture.
Currently, Makita Energy's main commercial and industrial models, the R series 75-110kW, enable the whole system efficiency to reach 98.6%. the low power consumption and high power density characteristics of the IGBT7 H7 series discrete devices allow technical issues such as current distribution during parallel connection to be simplified and optimized.
