In the context of the rapid development of the global semiconductor industry, gallium nitride (GaN) technology is becoming one of the key forces driving industry change due to its superior performance in high-frequency, high-power, high-temperature and high-voltage applications. Recently, Japan's Shin-Etsu Chemical Industry Co., Ltd. announced that it has successfully developed and started providing samples of 300 mm (12 inches) QST (Qromis substrate technology) substrate for GaN epitaxial growth. This important development not only marks a new milestone in GaN technology, but also brings new growth opportunities to the global semiconductor industry.
Due to its wide bandgap characteristics, high thermal conductivity, high breakdown electric field strength, high saturated electron drift rate and high bonding energy, GaN has shown great application potential in many fields such as 5G communications, new energy vehicles and consumer electronics in recent years. Especially in the field of power electronics, the high-frequency and high-efficiency characteristics of GaN devices make them key materials to drive the revolution in power electronics. Shin-Etsu Chemical's 300 mm QST substrate greatly enhances the flexibility of GaN device manufacturing and paves the way for the production of high-quality, large-size GaN epitaxial layers.
Figure: Shin-Etsu Chemical 300 mm QST substrate
Maturity and market prospect of GaN technology
Shin-Etsu Chemical's breakthrough comes at a time when GaN technology is maturing. Compared to traditional silicon-based semiconductors, GaN is ideal for future technologies due to higher energy efficiency, better thermal management, and smaller device size. In the field of power electronics, GaN devices are already being used in applications such as data centers, automotive powertrains, and renewable energy infrastructure. The smaller size, faster speed, and higher efficiency of GaN devices can lead to significant energy savings, especially in energy-intensive data centers and other critical applications.
Through its collaboration with Qromis Inc. in the United States, Shin-Etsu Chemical has effectively solved the warpage and crack problems common when growing GaN on large-size silicon-based substrates by utilizing Qromis' unique thermal expansion coefficient matching technology. This not only improves the quality of the GaN epitaxial layer, but also provides the possibility for the fabrication of large-size and high-performance GaN devices. According to a report by TrendForce, the global GaN power device market is expected to grow from $180 million in 2022 to $1.33 billion in 2026, with a compound annual growth rate (CAGR) of 65%.
Wide range of applications in the field of power electronics
GaN technology is rapidly expanding from the consumer electronics sector to the industrial and automotive markets. As one of the important application areas of GaN technology, data centers have higher and higher requirements for energy efficiency and power density as artificial intelligence (AI) technology continues to advance and the demand for computing power continues to rise. Due to their high efficiency and high power density, GaN devices are expected to be a key solution for improving power efficiency in data centers. By reducing power losses and improving power conversion efficiency, GaN technology can not only save operating costs, but also reduce energy consumption, driving data centers to become greener and more sustainable.
In the automotive market, the demand for GaN technology is also increasing. GaN devices are expected to be used on a small scale in power electronics such as on-board chargers (OBCs) and DC-DC converters by 2025. By 2030, GaN technology is likely to be further applied to key automotive components such as traction inverters. Because GaN devices offer higher conversion efficiency, smaller size, and better thermal management, automakers can develop lighter, more efficient powertrains that further improve the overall performance of electric vehicles.
Advantages of 300 mm QST substrate
Shin-Etsu Chemical's 300 mm QST substrate brings significant advantages to GaN device manufacturers, especially in terms of cost control, productivity improvement, and large-scale production. Compared to traditional silicon-based substrates, QST substrates are larger in size, enabling more chips to be manufactured per substrate, effectively reducing production costs and increasing yields. In addition, the performance and reliability of GaN devices are further improved by growing higher quality GaN epitaxial layers on larger substrates, especially in high-end applications such as electric vehicles, telecom infrastructure, and industrial power systems.
As the global semiconductor industry moves towards sustainability, GaN technology plays a vital role in improving power system efficiency and reducing material consumption. With the introduction of 300mm substrates and growing market demand, the cost of GaN devices is expected to further decrease, allowing them to compete more directly with traditional silicon-based devices in cost-sensitive applications.
Market impact and future outlook
Shin-Etsu Chemical showcased its 300mm QST substrate at SEMICON Taiwan 2024. As one of the most influential semiconductor professional exhibitions in the world, this exhibition has become an important platform for Shin-Etsu Chemical to showcase its technological strength and market leadership. The introduction of the 300mm QST substrate has received a lot of attention from the industry, indicating that GaN technology will usher in wider applications in the next few years. As Shin-Etsu Chemical continues to expand its production capacity for QST substrates, the application of GaN devices in multiple industries will further accelerate.
In applications such as telecom infrastructure, data centers, electric vehicles, and industrial power systems, the efficiency and performance of GaN technology will be an important force driving industry innovation. It is expected that in the next few years, with the further maturity of the technology, the application field of GaN devices will continue to expand, and its market size will also grow rapidly.
Epilogue
Shin-Etsu Chemical's introduction of the 300 mm QST substrate marks an important milestone in the history of GaN technology. By solving the technical problems of GaN epitaxial growth on large-size silicon-based substrates, QST substrates provide new possibilities for the fabrication of GaN devices in high-power and high-frequency applications. With the continuous maturity of GaN technology, we have reason to believe that GaN devices will play a more important role in the future technological revolution and inject new impetus into the development of the global semiconductor industry.
In the next few years, with the wide application of GaN technology in power electronics, automobiles, data centers, and other fields, Shin-Etsu Chemical's QST substrates are expected to be the key to promoting the popularization of GaN technology. With the growth of market demand and the advancement of technology, the semiconductor industry will face new challenges and opportunities. As a new generation of semiconductor materials, GaN technology will play an indispensable role in promoting the development of the industry and technological innovation.
