Cambridge GaN Devices (CGD) recently introduced two new ICeGaN™ product families in GaN power IC packages that offer higher power density and efficiency benefits for data centers, inverters, and other industrial applications with low thermal resistance and ease of optical inspection. These new packages include the DHDFN-9-1 (Dual Heatsink DFN) and BHDFN-9-1 (Bottom Heatsink DFN), both of which are housed in a fully proven DFN package that ensures rugged reliability.
The DHDFN-9-1 and BHDFN-9-1 models feature fully proven DFN packaging technology to ensure the robustness and reliability of the package. With its double-sided cooling design, the DHDFN-9-1 package offers bottom, top, and double-sided cooling flexibility, especially in top-side and double-sided cooling configurations, outperforming commonly used TOLT packages on the market. The BHDFN-9-1 package, with its thermal resistance of 0.28 K/W, offers performance comparable to or better than leading devices.
figure:CGD Introduces Revolutionary New GaN Power IC Package
The new package has been designed not only with performance in mind, but also with flexibility and convenience in mind. The DHDFN-9-1's bipolar pin design optimizes PCB layout and simplifies the paralleling process, allowing customers to easily handle applications up to 6 kW. The BHDFN-9-1 package, on the other hand, can be used in common with commonly used TOLL package GaN power ICs due to its similar package layout, which is convenient for the application and evaluation of existing designs.
The two new GaN power IC packages launched by CGD not only represent the company's innovative strength and technical level in the field of power semiconductors, but also reflect the pursuit and expectation of the entire industry for high-efficiency thermal management technology. With the continuous development of electronic technology, the thermal management requirements for power semiconductor devices will become higher and higher. The introduction of these two packages will lead the industry towards more efficient, reliable and environmentally friendly development.
Nare Gabrielyan, product marketing manager at CGD, emphasized that the new package is part of CGD's strategy to enable customers to leverage the GaN power ICs of the ICeGaN™ product family to achieve higher power density and efficiency benefits across a wide range of applications. These applications not only place higher demands on the device, but also require the device to be rugged and easy to design, and the new package supports and extends these inherent features of the ICeGaN™ product family.
The improved thermal resistance performance brings multiple benefits. First of all, more power output can be achieved under the same RDS(on) conditions. Second, the device can operate at a lower temperature at the same power, reducing the need for heat dissipation and thus reducing system costs. In addition, lower operating temperatures mean higher reliability and longer product life. If the application requires a lower cost, the designer can also choose a low-cost product with a higher RDS(on) to achieve the required power output.
At the same time, these two packages will also bring more market opportunities and competitive advantages to CGD companies. With the continuous expansion and upgrading of markets such as electric vehicles and data centers, the demand for high-performance power semiconductor devices will also increase. CGD will occupy a more important position in the industry by virtue of the technical advantages and market competitiveness of these two packages.
