According to IDTechEx's market research, SiC inverters had account for 28% of the BEV market in 2023. GaN HEMTs are an emerging technology that could be the next major disruptor in the EV market. They have key efficiency benefits, but face significant challenges in terms of adoption, such as their eventual power handling capabilities. There is considerable overlap between SiC MOSFETs and GaN HEMTs, both of which will have a foothold in the automotive power semiconductor market.
SiC occupies an important position in the power electronics of electric vehicles due to its excellent thermal conductivity, high breakdown voltage, and low on-resistance. The high power density and efficiency of SiC devices enable electric vehicles to operate at higher performance while extending battery life. The successful application of SiC MOSFET in Tesla's Model 3 marks a breakthrough in the commercialization of SiC technology in the field of electric vehicles. As technology continues to advance, the use of SiC in EV inverters, on-board chargers (OBCs), and DC-DC converters is expected to increase further, especially in EVs with 800V high-voltage platforms.
With its ultra-fast switching speed, high efficiency, and small size, GaN offers unique advantages in high-frequency applications in electric vehicles. GaN devices are not only suitable for applications such as wireless charging, LiDAR, and audio amplifiers, but also enable faster charging and higher power density in on-board chargers (OBCs), reducing the size and weight of OBCs. In addition, the application of GaN technology in traction inverters can help improve the overall performance and range of the vehicle while reducing system costs. With the maturity of GaN technology, its application in the field of electric vehicles is gradually expanding, forming a high-performance application that competes with SiC.
Figure: Emerging applications and future trends of SiC and GaN in electric vehicles
SiC and GaN are expected to play an even more critical role in the field of electric vehicles in the coming years. As the EV industry pursues higher efficiency and longer ranges, the use of these two materials will continue to increase. The development of integrated GaN power ICs will promote miniaturization, weight reduction, and high efficiency of electric vehicle power systems. At the same time, EVs with high-voltage platforms are expected to bring new growth opportunities for SiC and GaN power devices.
In addition, as the technology matures and cost-effectiveness improves, SiC and GaN are expected to replace traditional silicon-based semiconductors in a wider range of applications for electric vehicles. This will not only drive further improvements in the performance of electric vehicles, but will also accelerate the adoption of electric vehicles and contribute to the reduction of CO2 emissions in the road sector.
As key semiconductor materials for electric vehicles in the future, the application and development of SiC and GaN will profoundly affect the technological progress and market pattern of the electric vehicle industry.
IDTechEx predicts that by 2035, the market share of SiC MOSFETs will well exceed 50%, while the automotive power semiconductor market will grow substantially. SiC MOSFETs offer solutions to many of the problems facing the EV market: range anxiety, fast charging, sustainability, and the rise of 800V architectures.
At the same time, IDTechEx also made a forecast for GaN, saying that GaN will enter the electric vehicle power electronics market within 5 years. The way to market varies depending on the component: in the early days it was an on-board charger, a DC-DC converter, and later a traction inverter.
