Infineon Technologies AG, a global semiconductor company, today announced that it has successfully developed the world's first 300 mm (approximately 12 inches) power gallium nitride (GaN) wafer technology. This technological breakthrough is expected to significantly drive the growth of the GaN power semiconductor market and bring significant changes to industrial, automotive, consumer, computing, and communications applications.
Compared to existing 200mm wafers, 300mm wafer technology means that more chips can be manufactured on a single wafer, resulting in increased production efficiency and economies of scale. This advancement will not only increase the yield of chips per wafer by a factor of 2.3, but will also help reduce production costs and make GaN technology more cost-effective. Due to their advantages in efficiency, size, and weight, GaN power semiconductors are rapidly being adopted in a number of areas, including power supplies, solar inverters, chargers and adapters, and motor control systems for AI systems.
Jochen Hanebeck, CEO of Infineon Technologies AG, said: "This technological breakthrough will be a game-changer for the industry and will enable us to unlock the full potential of GaN. Infineon has successfully manufactured 300 mm GaN wafers at its power plant in Villach, Austria, and plans to further expand production capacity in line with market demand. The company will showcase its 300mm GaN technology at the electronics show in Munich.
Figure: Infineon has successfully developed the world's first 300 mm Power GaN technology
This significant development underscores Infineon's leadership in GaN and power system innovation. This innovation not only demonstrates Infineon's innovation leadership in GaN and power systems, but also heralds the company's leadership in the fast-growing GaN market. The global advanced packaging market is expected to reach $78.6 billion by 2028, and this technological breakthrough from Infineon will undoubtedly add confidence to this forecast.
Infineon Technologies AG has also opened the world's largest and most efficient silicon carbide power semiconductor fab in Malaysia, which will further strengthen and strengthen Infineon's leading position in the global power semiconductor market. The new fab uses 100 percent green electricity and adopts advanced energy-saving and sustainable measures in its operating practices, which is a sign of Infineon's strong commitment to driving sustainability.
With the continuous advancement of technology and the expansion of the market, it is expected that in the next few years, advanced packaging technology will bring more changes and development opportunities to the semiconductor industry. The launch of Infineon's 300 mm GaN wafer technology is not only a demonstration of the company's technological prowess, but also a strong signal for the future development of the entire semiconductor industry. With the maturity of the technology and large-scale production, the cost will gradually decrease, making GaN more competitive in the market. At the same time, with the acceleration of the localization process, the market share of domestic gallium nitride manufacturers will gradually increase. The application field of gallium nitride is constantly expanding, in addition to the automotive field, the application of smart home, smart pension and other fields is gradually increasing. The market competition will become more and more fierce, and enterprises need to make continuous efforts in technological innovation, product quality, cost control, etc., in order to stand out in the market competition.
