The market is growing with increasing demand for convenient, eco-friendly mobility, mobile energy storage, and compact power solutions. As a core component of electric vehicles, energy storage systems, and other fields, the technological advancement of battery management systems (BMS) is essential to improve the safety and efficiency of batteries.
Recently, Innoscience, an innovative company with deep technology accumulation in the semiconductor field, launched a new generation of battery management system solutions using VGaN technology. As a representative of the third generation of semiconductor materials, gallium nitride is gradually changing the pattern of the power electronics industry with its high frequency, high efficiency, high power density and high temperature resistance. Based on the unique advantages of GaN materials, Innoscience has successfully developed VGaN series products and applied them to BMS solutions, realizing a comprehensive upgrade from materials to applications.
VGaN technology is a semiconductor technology based on gallium nitride materials, which is designed with a vertical device structure and is widely used in high-power and high-efficiency electronic devices, especially in the field of power electronics. At the heart of the technology is its dual-conduction and bi-directional shut-off, which allows VGaN devices to replace traditional two-NMOS pairs, thereby significantly reducing system cost while maintaining performance. In addition, the high frequency characteristics of VGaN also enable the BMS system to respond more quickly to changes in battery status, improving the overall efficiency and stability of the system.
With the growing demand for efficient power conversion technologies in fields such as electric vehicles, 5G communications, data centers, and renewable energy, VGaN technology will gradually become an important development direction in the field of power semiconductors. In the future, with the advancement of manufacturing technology and the reduction of costs, VGaN is expected to be used in high-voltage and high-power applications on a large scale, becoming an important solution to replace traditional silicon devices.
Figure: Innoscience launches a new generation of BMS solutions
Innoscience's next-generation BMS solution leverages the advantages of VGaN™ technology to achieve breakthroughs in many aspects. First of all, in terms of cost reduction, by reducing the number of switch tubes, the material cost is reduced, and the PCB occupies a smaller board area, which further saves system space and weight. Taking the 48V/180A BMS demo design as an example, only 16 VGaN can replace the traditional 18 pairs of Si MOSFETs (36 pieces), and the cost reduction effect is significant.
Secondly, in terms of optimizing heat dissipation performance, Innoscience has achieved the best heat dissipation effect through the careful design of VGaN package form and PCB layout. In the absence of radiator, the maximum temperature rise of the system can still be controlled within 50°C, which ensures the long-term stable operation of the system.
In addition, the new generation of BMS solutions is characterized by a high degree of integration. By using Innoscience's self-developed VGaN™ power device and special logic conversion circuit, the charging and discharging control is fully optimized. At the same time, the solution is also compatible with the current mainstream low-side AFE control logic, making system upgrade and replacement more convenient.
Innoscience's next-generation BMS solution has been successfully applied in many fields due to its high efficiency, low cost, and high integration. In the field of mobile energy storage, the solution provides stable and reliable battery management support for outdoor portable energy storage and outdoor power supply products. In the field of electric vehicles, whether it is an electric two-wheeler or a three-wheeler, this solution can effectively improve the efficiency and safety of the battery, and extend the service life of the battery.
