Storage technology giant Kioxia announced that several of its innovative research results will be presented at the upcoming IEEE International Electronic Devices Conference (IEDM 2024) in San Francisco, United States, December 7-11. As a leader in the field of semiconductor storage, Kioxia has been committed to promoting the development of storage technology to meet the growing demand for data storage and provide solid underlying support for emerging technologies such as artificial intelligence and big data.
At IEDM 2024, Kioxia will highlight the following three innovative technologies:
Oxide Semiconductor Channel Transistor DRAM (OCTRAM): The OCTRAM technology jointly developed by Kioxia and Nanya Technology is expected to significantly reduce the power consumption of DRAM, making it promising for applications in artificial intelligence, 5G communications, and other fields. By employing oxide semiconductor materials and optimizing the transistor structure, OCTRAM achieves extremely low leakage current, which reduces overall power consumption.
High-Capacity Crosspoint MRAM (Magnetoresistive Random Access Memory) Technology: The high-capacity crosspoint MRAM technology, jointly developed with SK hynix, achieves industry-leading cell density by combining a high-density selector with a magnetic tunnel junction. At the same time, the technology also adopts an innovative readout method, which effectively reduces read interference and improves the reliability of memory. This technology has great potential for applications in fields such as artificial intelligence and big data processing. Due to its non-volatile, high-speed read/write, unlimited number of writes, and high reliability, MRAM is expected to replace existing storage technologies in a variety of applications. The basic unit of MRAM is the Magnetic Tunnel Junction (MTJ), which uses the change in the magnetic resistance of a material to store data.
Picture: Kioxia will launch a number of storage innovations (Source: Financial Post)
Next-generation 3D storage technology with horizontal cell stacking structure: Kioxia's self-developed next-generation 3D flash memory technology uses a horizontal cell stacking structure, which has higher bit density and reliability than traditional vertical stacking structures. This innovation is expected to further increase the storage capacity and performance of flash memory to meet the growing demand for data storage in the future. 3D DRAM dramatically reduces the size of DRAM cells through vertical stacking technology, improving energy efficiency and reducing unit area. This technology is expected to be a key driver of DRAM scaling to meet growing storage requirements and performance requirements.
In addition, companies such as Samsung Electronics are accelerating the commercialization of 3D DRAM as a major game-changer for the industry. 3D DRAM is seen as the only way to go when traditional DRAM architectures face performance and process limits.
The launch of these innovative technologies not only demonstrates Kioxia's leading position in the field of memory technology, but also injects new vitality into the development of the entire semiconductor industry. With the rapid development of artificial intelligence, Internet of Things and other technologies, higher requirements are put forward for the performance and capacity of memory. These innovations are expected to drive breakthroughs in storage technology and provide a stronger underlying support for the future digital world.
Kioxia announced a number of storage technology innovations at IEDM 2024, marking the development of storage technology in the direction of higher density, lower power consumption, and higher performance. These innovations will not only promote the development of the memory industry, but also provide a more solid foundation for the development of emerging technologies such as artificial intelligence and big data.
