Navitas Semiconductor has reportedly introduced a new range of third-generation "fast" (G3F) 650 V and 1,200 V SiC MOSFETs. These MOSFETs are designed to provide the fastest switching speeds, highest efficiency, and higher power density. They are optimized for applications such as AI data center power supplies, on-board chargers (OBCs), fast EV roadside superchargers, and solar/energy storage systems (ESS). The wide selection of products includes a variety of industry-standard packages, from D2PAK-7 to TO-247-4. These packages are specifically designed to meet the requirements of demanding applications that require high power and high reliability.
The G3F series is designed for superior switching performance, with a 40% improvement in hard-switching coefficient of performance (FOM) compared to competing CCM TPPFC systems. This will increase the power of the upcoming AI power supply units (PSUs) to up to 10 kW and increase the power per rack from 30 kW to 100-120 kW.
figure:Navitas Introduces 3rd Generation Fast SiC MOSFETs
G3F GeneSiC MOSFETs are fabricated using a unique process called "trench assist planes". In addition, these MOSFETs not only surpass the performance of trench MOSFETs, but are also more resilient, easy to manufacture, and cost-effective than competing products. G3F MOSFETs offer superior efficiency and fast performance, with case temperatures significantly reduced by up to 25°C compared to SiC products from other vendors. In addition, their service life can be extended by up to three times.
The "Trench Assist Plane" technology minimizes RDS(ON) with increasing temperature, minimizing power losses over the entire operating range. It has a 20% lower RDS(ON) in real-world high-temperature conditions compared to the competition.
In addition, all GeneSiC MOSFETs feature the highest recorded 100% test avalanche resistance, 30% longer short-circuit tolerance, and accurate threshold voltage distribution for easy parallel connection. As a result, GeneSiC MOSFETs are ideal for high-power applications that require fast time-to-market.
Navitas has developed a new high-power-density AI server PSU reference design. The design uses a CRPS185 form factor to implement a staggered CCM TP PFC topology using a G3F FET rated at 650 V, 40mOhms. The LLC-grade GaNSafe™ power ICs offer a power density of 138 W/inch3 and a peak efficiency of over 97%, meeting the "Titanium Plus" efficiency standard currently required in Europe. Navitas' innovative 22 kW, 800V bidirectional OBC and 3KW DC-DC converters for the EV market feature 1,200 V/34 mOhm (G3F34MT12K) G3F FETs. This results in a converter with a power density of 3.5 kW/L and a peak efficiency of 95.5%.
