Nexperia recently announced plans to expand its NextPower family of 80V and 100V MOSFETs with a new range of LFPAK package devices in industry-standard 5×6mm and 8×8mm sizes. These new MOSFETs are known for their low on-resistance (RDS(on)) and low reverse charge (Qrr) designs, enabling high efficiency and reduced spikes during switching. They are suitable for a wide range of applications, including servers, power supplies, fast chargers, USB-PD, telecommunications, motor control, and industrial equipment.
NextPower has the following features:
Low on-resistance (RDS(on)): The new MOSFETs have very low on-resistance, which helps reduce power losses and increase efficiency.
Low Reverse Charge (Qrr): By optimizing the design, NextPower MOSFETs reduce spikes during switching, which helps reduce electromagnetic interference (EMI).
High Efficiency: The low RDS(on) and low Qrr design makes these MOSFETs more efficient when switching, reducing energy losses.
Reduced EMI: Due to the low Qrr design, these MOSFETs generate less electromagnetic interference when switching, helping to improve the product's electromagnetic compatibility (EMC).
Multiple package options: 5×6mm and 8×8mm LFPAK packages are available to meet the needs of different application scenarios.
Wide voltage range: Designers can choose from a variety of voltage ratings of 80V or 100V to suit different application needs.
Optimized RDS(on) range: The new MOSFETs offer a wide range of RDS(on) values from 1.8 mΩ to 15 mΩ.
Future product planning: Nexperia plans to introduce new LFPAK88 MOSFETs that offer lower RDS(on) at 80V and include high power-intensive CCPAK1212 packages in its portfolio.
Interactive datasheets: Nexperia offers engineers the option to access its award-winning interactive datasheets, which provide detailed and user-friendly information on device behavior to help designers better understand and use these MOSFETs.
Figure: Nexperia has launched a number of new LFPAK power devices
When designing MOSFETs, many manufacturers typically focus on minimizing gate charge (QG(tot)) and gate drain charge (QGD) to improve switching efficiency. However, Nexperia's in-depth research has led to the importance of Qrr as it is directly related to the spikes that occur during switching, which in turn affect the level of electromagnetic interference (EMI) generated by the device during switching.
By paying special attention to Qrr parameters, Nexperia has significantly reduced the spikes generated by NextPower 80/100V MOSFETs when switching, thereby reducing EMI generation. This brings significant advantages to the end user, especially when their products need to pass electromagnetic compatibility (EMC) tests, avoiding costly modifications and the addition of additional external components at the final stage.
Nexperia's new MOSFETs offer a 31% reduction in on-resistance compared to existing products. The company also plans to introduce a new LFPAK88 MOSFET in the future with an RDS(on) as low as 1.2 mΩ at 80V. In addition, Nexperia plans to add high-power-intensive CCPAK1212 packages to its product line. To further support the needs of engineers in the design and certification process, Nexperia offers the option to access its award-winning interactive datasheets, which provide detailed and easy-to-understand information on device behavior.
