Scottsdale, Arizona, United States – onsemi, a smart power and sensing technology company, has introduced its latest generation of silicon and silicon carbide (SiC) hybrid power integrated modules (PIMs) designed to boost power output in utility-scale solar string inverters and energy storage systems (ESS) using advanced F5BP packaging technology.
These new modules achieve higher power density and efficiency in the same volume compared to previous generations, increasing the total system power of the solar inverter from 300kW to 350kW. This upgrade means that a utility-scale solar farm with a capacity of 1GW using the latest generation of modules could save nearly 2MW of energy per hour, which is equivalent to powering more than 700 homes per year. In addition, the adoption of new modules can reduce the number of modules required, thereby reducing the cost of power components by more than 25 percent.
onsemi noted that solar power has achieved the lowest levelized cost of energy (LCOE) and is emerging as the preferred choice for renewable energy generation worldwide. However, to compensate for the volatility of solar power generation, utility operators need to be equipped with large battery energy storage systems (BESS) to ensure a steady supply of energy to the grid. To support this system mix, manufacturers and utilities need to provide efficient and reliable power conversion solutions. Every 0.1% increase in efficiency can save up to $250,000 per gigawatt of installed capacity in operating costs per year.
Figure: onsemi F5BP-PIMs
"Solar, as a variable energy source that relies on sunlight, requires us to continuously improve the efficiency, reliability and advanced storage solutions of our systems to ensure that the global grid remains stable and reliable during peaks and valleys in power demand," said Sravan Vanaparthy, vice president of the Industrial Power Division of the onsemi Power Solutions Group. More efficient infrastructure will drive widespread adoption of solar power, reduce energy waste, and accelerate the transition to renewable energy. ”
The new F5BP-PIM module integrates a 1050V FS7 insulated gate bipolar transistor (IGBT) and a 1200V D3 EliteSiC diode to provide a solid foundation for high-voltage and high-current power conversion, reducing power consumption and improving reliability. The FS7 IGBTs have low turn-off losses, reducing switching losses by up to 8%, while EliteSiC diodes offer excellent switching performance with a 15% reduction in voltage flicker (VF) compared to previous generations.
The PIM module uses a Type I Neutral Point Clamp (INPC) structure in the inverter application and a fly-across capacitor topology in the boost module. At the same time, the module features an optimized electrical layout and an advanced direct-bonded copper (DBC) substrate that reduces stray inductance and thermal resistance. The copper baseplate further reduces the thermal resistance of the heat sink by 9.3%, ensuring that the module can maintain good heat dissipation under high load operation. This excellent thermal management capability is critical to maintaining the high efficiency and long life of the module, enabling it to perform well in demanding applications that require stable and reliable power supply.
