Continued: Rong Si Yu Lei: The localization process of silicon carbide still faces many challenges1
Technological and market challenges in the process of localization
Although silicon carbide devices have shown broad application prospects in the field of new energy, China's silicon carbide device industry still faces many challenges in the localization process. From a technical point of view, there is still a gap between domestic silicon carbide devices and the international advanced level in manufacturing process and quality control, especially in key links such as crystal growth, wafer processing and device manufacturing. These technical bottlenecks not only limit the performance improvement of domestic silicon carbide devices, but also affect their competitiveness in the market.
In addition, the market's recognition of domestic silicon carbide devices still needs to be improved. At present, more than 90% of China's silicon carbide device market share is controlled by overseas manufacturers, such as Infineon, Rohm, Renesas, onsemi, Wolfspeed, etc. This shows that the competitiveness of domestic enterprises in the international market still needs to be strengthened. In order to break through this dilemma, domestic silicon carbide device manufacturers need to increase R&D investment, improve product performance and quality through technological innovation, and at the same time enhance market promotion efforts to improve the confidence and acceptance of downstream enterprises.
Figure: Challenges of domestic SiC devices in automotive applications
The necessity of policy support and industrial collaborative innovation
In the process of promoting the localization process of silicon carbide devices, the government's industrial policy support and the collaborative innovation of the industry are very important. The government can accelerate the development of the domestic silicon carbide device industry by formulating industrial policies and providing R&D financial support to establish an environment conducive to technological innovation. At the same time, the government can also promote the application and popularization of domestic silicon carbide devices through market access policies and demonstration projects.
Businesses also play a vital role in this process. Domestic silicon carbide device manufacturers need to work closely with research institutions to form a synergistic effect of technological innovation and industrial application. Through the integration of resources, enterprises can accelerate technological breakthroughs, gradually narrow the gap with the international advanced level, and finally realize the competitiveness of domestic silicon carbide devices in the global market.
The strategic significance and market potential of localization
Localization is not only a means to reduce costs and improve the stability of the supply chain, but also an important guarantee for national strategic security. As the world's largest market for new energy vehicles and photovoltaic power generation, China has a huge demand for high-performance semiconductor devices. The localization of silicon carbide devices will not only help reduce the dependence on the external supply chain and enhance the independent and controllable ability of the domestic industry, but also occupy a place in the global semiconductor industry and provide strong support for the improvement of the country's scientific and technological strength.
In addition, the localization of silicon carbide devices can also promote China's technological leadership in the field of new energy. Through technological innovation and market expansion, domestic silicon carbide devices are expected to occupy more shares in the global market and inject new impetus into the development of China's semiconductor industry.
Corporate Innovation and International Cooperation: Building Global Competitiveness
In the context of globalization, international cooperation and technology introduction are crucial to promote the localization of silicon carbide devices. Domestic enterprises need to actively participate in international cooperation, through the introduction of foreign advanced technology, absorb international experience, improve their own technical level and market competitiveness. At the same time, enterprises should also pay attention to cultivating international talents, strengthen cooperation with international enterprises and research institutions, and jointly promote the technological progress and industrialization of silicon carbide devices.
Enterprise innovation is also the key to enhancing the competitiveness of domestic silicon carbide devices. Domestic enterprises should increase R&D investment, tackle key problems in the technical bottlenecks of silicon carbide devices, and improve product performance and quality. In addition, enterprises should also strengthen cooperation with downstream application enterprises to meet the needs of different markets through customized solutions, and gradually expand the market share of domestic silicon carbide devices.
Future-oriented strategic layout: Embrace the new era of green energy
Looking forward to the future, China's silicon carbide device industry should focus on long-term development and carry out strategic layout. This includes strengthening basic research, making breakthroughs in key technologies, optimizing the industrial structure, and forming a coordinated development of the upstream and downstream of the industrial chain. In addition, domestic enterprises should also actively expand the international market and enhance their influence in the global semiconductor market.
With the increasing global demand for green energy, silicon carbide devices, as a key technology in the field of new energy, will play a more important role in the future development. In the process of localization of silicon carbide device industry, China is not only facing technical and market challenges, but also has broad development opportunities. Through technological innovation, industrial synergy and policy support, China is expected to occupy an important position in the global silicon carbide device market and contribute to the global energy transition and sustainable development.
Conclusion: A bright future in the wave of localization
The localization of silicon carbide devices is an inevitable choice for the development of China's semiconductor industry. Although this process is full of challenges, through technological innovation, market development and policy support, China's silicon carbide device industry will occupy an important place in the global market in the future, and make greater contributions to promoting the global energy transition and achieving the sustainable development goals.
