In the context of the global energy transition and the rapid development of power electronics technology, Sanan Semiconductor Co., Ltd. (hereinafter referred to as Sanan) has made significant progress in the field of silicon carbide (SiC) power devices. Recently, Sanan announced the addition of 1700V and 2000V devices to its silicon carbide portfolio, a move that not only expands its product line, but also provides greater energy efficiency for applications ranging from renewable energy to EV charging infrastructure.
Frist,Technological breakthroughs and product highlights
Sanan's new product line includes 1700V SiC MOSFETs with 1000mΩ on-resistance, 1700V SiC diodes in 25A and 50A models, and 2000V 40A SiC diodes. In addition, the company plans to release a 2000V 35mΩ SiC MOSFET in 2025. "By supporting higher DC voltages, these components can increase power output at the same current level, or significantly reduce current and energy losses while maintaining the system's power rating," said Leo Liao, project manager.”
Second, the expansion of the application field
1700V SiC MOSFETs and diodes are particularly suitable for applications that require additional voltage headroom beyond conventional 1200V devices. 2000V SiC diodes can be used in high DC link voltage systems up to 1500V DC to meet the needs of industrial and power transmission applications. Compared to traditional silicon-based alternatives, the new SiC devices are able to deliver superior efficiency in a wide range of applications, including solar string inverters and power optimizers, EV fast charging stations, energy storage systems, and high-voltage grids and energy transmission networks.
Figure: Sanan 1700V/2000V SiC product portfolio expands, efficiency doubles (picture from the Internet)
Third, Market trends and demand growth
According to Yole's forecast, the global conductive SiC power device market is expected to reach $6.3 billion by 2027, with a CAGR of 34% from 2021 to 2027. In 2027, the market size of conductive SiC power devices for new energy vehicles are expected to reach 5 billion US dollars, accounting for 79%. SiC devices are mainly used in PCUs (power control units, such as automotive DC/DC) and OBC (charging units), compared with Si devices, SiC devices can reduce the weight and volume of PCU devices, reduce switching losses, and improve the operating temperature and system efficiency of devices.
Fourth, Sanan's industry status and commitment
As a member of the JEDEC JC-70 wide bandgap semiconductor standard committee, Sanan has passed the AEC-Q101 standard certification for its series of products, and will cooperate with the industry to promote the popularization of the standard and continue to iterate to higher quality. "As the world transitions to cleaner energy sources and more efficient power systems, the demand for high-performance power semiconductors continues to grow, and our expanded SiC portfolio demonstrates our commitment to driving innovation in this critical area," emphasized Z.R. Zhang, Vice President of Sales and Marketing.”
fifth, Conclusions and future prospects
The launch of Sanan Semiconductor's 1700V and 2000V SiC devices marks the company's leading position in the field of silicon carbide technology. The high efficiency and performance of these devices will make an important contribution to the improvement of energy efficiency worldwide. With the continuous maturity of technology and the deepening of applications, we have reason to believe that Sanan's product portfolio will meet the market demand for high-performance power semiconductors, promote the energy efficiency revolution, and provide strong technical support for the realization of a low-carbon social life. As the global demand for clean energy and electric vehicles continues to grow, Sanan's product portfolio will play a more critical role, contributing China's wisdom and strength to the improvement of global energy efficiency.
Introduction of Sanan Semiconductor:
Hunan Sanan Semiconductor Co., Ltd. (hereinafter referred to as Sanan Semiconductor), as a wholly-owned subsidiary of Sanan Optoelectronics (SH600703), a listed company, focuses on the field of power electronics, providing wide bandgap semiconductor materials, components and foundry services. The company's products cover SiC MOSFET/SBD, SiC substrate/epitaxy, etc., serving new energy vehicles, photovoltaic energy storage and other fields. It has a vertically integrated manufacturing service platform for the whole SiC industry chain, with world-leading production capacity and technology. Through a number of international management system certifications, SiC MOSFET/SBD products have obtained AEC-Q101 automotive grade certification. Sanan Semiconductor continues to invest in technological innovation, has a large number of R&D personnel and patents, and is committed to breakthroughs in high-end LED chips and third-generation semiconductor technology. At present, the annual production capacity of SiC is 250,000 pieces (6 inches), which will increase to 480,000 pieces after the second phase of the project is put into operation, further consolidating its leading position in the field of semiconductor materials.
