SemiQ, a leading designer, developer and global supplier of advanced silicon carbide (SiC) solutions for high-voltage, high-efficiency applications, has reportedly launched a new series of 1200V SiC MOSFET six-cell modules. This initiative has undoubtedly brought new hope and opportunities to many industries.
As industries increasingly demand power density and energy efficiency, this new product from SemiQ has emerged. It is designed to meet the needs of large-scale, more compact, and more cost-effective system designs, and can be used in a wide range of applications, alleviating the space and cost pressures of current power systems.
This six-cell SiC MOSFET module features state-of-the-art planar technology, a rugged gate oxide structure, and an integrated, reliable body diode to ensure superior performance from the ground up. In the circuit topology design of the module, a three-phase bridge structure is adopted, and it has the characteristics of DC negative end splitting, crimp terminal connection and Kelvin source connection. These designs not only ensure stable electrical performance, but also improve signal integrity and make the module more reliable during operation.
In terms of performance, the module performs very well. The high-speed switching feature results in low switching losses and very small crust thermal resistance, providing excellent thermal and electrical performance. The modules were rigorously tested during the development process, not only for normal operation at voltages in excess of 1350V, but also for comprehensive 100% wafer-level burn-in testing (WLBI). These tests ensure that the modules operate stably and reliably under a wide range of demanding operating conditions.
Figure: SemiQ Launches 1200V SiC MOSFET Six-Element Module to Enable High-Performance Power Systems
From the perspective of application scenarios, the application scope of this series of modules is very wide. In AC/DC converters, it can achieve current conversion efficiently; In the energy storage system, it helps to improve the efficiency of energy storage and energy release; For EV fast-charging infrastructure, charging times can be significantly reduced; It also plays a key role in battery charging units, motor drives, PFC boost converters, induction heating and welding equipment, renewable energy systems, and uninterruptible power supplies (UPS). It is worth mentioning that the module can operate at junction temperatures up to 175°C and can be mounted directly on the heat sink, which makes it easy to integrate in environments where heat dissipation space is limited.
In terms of product specifications, the initial product launched this time consists of three different models. The resistance is 20mΩ GCMX020A120B2T1P, and the power dissipation rating is 263W; 40mΩ GCMX040A120B2T1P with a power dissipation rating of 160W; The 80mΩ GCMX080A120B2T1P has a power dissipation rating of 103W. They are capable of conducting continuous drain currents ranging from 29A to 30A, with pulsed drain currents up to 70A. In terms of switching performance, the turn-on switching energy is between 0.1mJ - 0.54mJ, the turn-off switching energy is between 0.02mJ and 0.11mJ, and the switching time (including on-delay, rise, turn-off delay and fall time) is in the range of 56ns - 105ns. Moreover, all of these electrical performance indicators are determined at a junction temperature of 25°C.
At present, these modules are ready for immediate market use. It is available in a compact package of 62.8mm×33.8mm×15mm, and has an integrated structure that facilitates the installation of a heat sink, greatly reducing the difficulty of installation and improving the ease of use.
The 1200V SiC MOSFET six-cell module launched by SemiQ is expected to set off a new revolution in the field of high-performance power systems and promote the upgrading and development of power applications in various industries due to its excellent performance, wide applicability and convenient installation design.
