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SK Hynix's 12 Layer HBM3E Chip:Ultra High performance in AI Era

Recently, SK hynix once again led the industry with a milestone innovation and officially announced the mass production of the world's first 12-layer HBM3E (High Bandwidth Memory 3 Enhanced) chip, which not only marks a major leap forward in storage technology, but also heralds an unprecedented performance explosion in the field of AI and high-performance computing. With its amazing 36GB capacity, this chip reshapes the capacity limit of HBM products and provides strong support for the data torrent in the AI era.

Technological innovation: the perfect integration of TSV and MR-MUF processes

This breakthrough achievement of SK hynix is rooted in its deep technology accumulation and forward-looking R&D strategy. The company has successfully reduced the thickness of DRAM chips by 40% by using advanced Through-Silicon Via (TSV) technology and the innovative MR-MUF (Multi-level Resistive Memory-Metal Under Fill) process, paving the way for higher layer counts. The combination of these technologies has enabled SK hynix to stack 12 individual 3GB DRAM chips tightly on top of each other in an unprecedented way, while the overall thickness is comparable to that of mainstream 8-layer products on the market, and the capacity has soared by 50% to an unprecedented 36GB.

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Figure: SK hynix announced mass production of the world's first 12-layer HBM3E chip

Peak performance: A leap forward in speed and capacity

Speed and capacity are the two core metrics that measure the performance of modern memory. SK hynix's 12-layer HBM3E chip exhibits excellent performance in both areas. Its data transfer rate is as high as 9.6Gbps, which is enough to support the most complex and massive AI model operation needs today and in the future. Taking the Llama 3 70B large language model as an example, on a GPU system equipped with four HBM3E chips, the chip can achieve 35 extremely fast readings of 70 billion parameters per second, which undoubtedly brings revolutionary acceleration to AI training and inference tasks.

Market impact: Leading a new era in the AI memory market

SK hynix's technological breakthrough is not only a demonstration of the company's own technological strength, but also an accurate grasp and positive response to the rapid development trend of AI. With the continuous evolution of AI technology, especially the rapid increase in the demand for high-bandwidth and large-capacity memory in deep learning and natural language processing, traditional storage solutions can no longer meet the market demand. The launch of SK hynix's 12-layer HBM3E chip not only meets the market's urgent demand for higher-performance memory, but also further strengthens the company's leading position in the AI memory market with its excellent performance advantages, setting a new benchmark for the industry.

Market outlook: Challenges and opportunities coexist

However, any technological progress and market change comes with uncertainties and challenges. According to reports from market analysts such as Morgan Stanley, the supply and demand relationship in the memory market is facing subtle changes, and the risk of oversupply cannot be ignored. Although SK hynix's stock price has risen significantly in the short term after the announcement of mass production, and its market value has climbed to a high of 120.34 trillion won, indicating that the market has strong confidence in the company's future development, the market will become increasingly competitive in the long run.

In the face of future market uncertainties, SK hynix needs to continue to increase R&D investment to maintain its leading edge in technological innovation, while optimizing supply chain management to flexibly respond to market changes. In addition, strengthening cooperation with downstream AI application companies to jointly explore the application potential of HBM3E chips in more scenarios is also a key measure to consolidate market position and expand market share.

Conclusion: SK hynix's AI semiconductor journey

In summary, the mass production of SK hynix's 12-layer HBM3E chip is not only a major breakthrough in the field of semiconductor memory technology, but also a gorgeous debut of a performance monster in the AI era. With its excellent performance and forward-looking technical layout, it has injected new vitality into the field of AI and high-performance computing, opening a new era in the AI memory market. Looking ahead, SK hynix will continue to uphold the spirit of innovation, continue to climb the peak of technology, and contribute more to the development of the global semiconductor industry.

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