According to reports, SK hynix's latest 1c DRAM technology has significantly improved its yield, and it has once again seized the lead with technological breakthroughs.
Dynamic Random Access Memory (DRAM) is widely used in various electronic products such as computers and smartphones. As an important branch of DRAM technology development, 1c DRAM technology is gradually emerging. 1c DRAM is a 10nm-class sixth-generation DRAM technology, and the "c" in "1c" stands for "critical dimension", which increases storage density, reduces production costs, and improves performance by continuously reducing the critical size of the chip and integrating more memory cells in a limited space.
As a sixth-generation DRAM chip technology manufactured in the 10nm process, 1c DRAM has significant advantages in terms of storage density, performance, and power consumption, and with the rapid development of artificial intelligence and big data, the demand for high-performance and large-capacity storage in data centers is growing explosively. 1c DRAM technology meets these needs with higher storage density and can store more data in the same space; The data transmission speed is faster, which can significantly improve the data processing efficiency; The energy efficiency ratio is also higher, which can reduce the energy cost of the data center.
It is reported that the yield of SK hynix's 1c DRAM technology-related modules has been greatly improved, up to 80%, and the yield of some 10nm 6th generation DRAM modules has reached 80%-90%, compared with the yield rate of 60% in the second half of 2024. This achievement gives the South Korean giant an advantage in the DRAM market, not only making SK hynix more competitive in the consumer memory market, but also seizing the opportunity in the HBM field, although the company's main focus is currently on the HBM market.
Figure: SK hynix's 1c DRAM technology yield has soared and may be mass-produced
At present, the HBM (High Bandwidth Memory) market is becoming increasingly competitive, and companies are making every effort to promote the development of HBM4 memory modules. HBM4 is regarded as a key technology that can bring about a "new round of revolution" in computing power, and has attracted much attention from the industry.
From the perspective of the industry structure, SK hynix's breakthrough is of great significance, temporarily surpassing Samsung in terms of technological advancement. Samsung is also actively working on a 1c DRAM module, but it's not going well. Recently, it was reported that Samsung is re-evaluating its 1c DRAM module in an attempt to further improve yield. SK hynix has taken the lead in mass production of HBM4, ahead of its competitors, and the gap between the two continues to widen.
Although DDR5 memory products based on 1c technology may not enter the market in the short term, 1c DRAM technology will be fully used in HBM4, especially in more advanced HBM4E products. SK hynix's success in 1c DRAM technology has undoubtedly laid a solid foundation for its competition in the future storage market, and it also indicates that the industry landscape may change profoundly as a result.
The evolution of DRAM technology has led to continuous innovation and advancement across the DRAM industry. On the one hand, it encourages other manufacturers to increase R&D investment to catch up with or surpass leading companies such as SK hynix, thereby promoting the technological level of the entire industry. On the other hand, with the development of process technology to a smaller size, 1c DRAM faces challenges such as higher process accuracy requirements, more complex design, and stricter thermal management, and solving these problems will drive innovation in related technical fields, such as lithography technology, material science, etc., to provide technical support for the long-term development of the semiconductor industry.
