STMicroelectronics has reportedly announced the construction of a state-of-the-art manufacturing facility in Catania, Italy, dedicated to the production of power devices and modules with 200mm silicon carbide (SiC) technology, and will also include test and packaging facilities.
It is reported that the combination of these facilities, which are being built at the same location, will form ST's SiC campus, providing a fully vertically integrated manufacturing facility for large-scale production of SiC at the same location. From substrate manufacturing to wafer production to module packaging, this integrated production model will greatly improve production efficiency, reduce costs, and enhance product quality control. Under the framework of the European Chips Act, the Italian government is expected to provide financial support of around 2 billion euros.
With the growing global demand for new energy vehicles, photovoltaics, energy storage and other fields, silicon carbide devices have become indispensable key materials in these fields due to their excellent high temperature, high frequency and high efficiency characteristics. ST's new facility is expected to begin mass production in 2026 and reach full capacity in 2033, with a capacity of up to 15,000 wafers per week to meet the spurt demand for high-performance silicon carbide devices.
Figure: STMicroelectronics is investing €5 billion to build a factory
Silicon carbide has a wide range of applications in many fields, such as semiconductor manufacturing, photovoltaics, electric vehicles, charging piles, etc. Especially with the development of new energy technology, the application of silicon carbide in solar cells, optoelectronic devices and other fields has shown a rapid growth trend. With the popularization and upgrading of electronic products, as well as the continuous development of new energy technologies, the market demand for silicon carbide continues to grow, and it is predicted that the global silicon carbide market size will reach $3,212.42 million by 2030, with a compound annual growth rate of 15.20% during the forecast period. According to Wolfspeed, the global silicon carbide device market is expected to grow to $8.9 billion by 2026.
ST is not only investing heavily in Italy, but is also actively expanding into the global market. In China, a joint venture between ST and Sanan Optoelectronics is building a 200mm SiC factory in Chongqing specifically to serve the Chinese market. This strategic layout will further strengthen ST's position in the Asian market and support the development of vehicle electrification in China.
ST has been an industry leader in silicon carbide technology. With the fourth-generation SiC MOSFET technology set to mass production in 2024, ST will continue to maintain its competitive edge in terms of performance and cost. The construction and commissioning of the new facility will provide ST with more capacity to meet the growing demand for high-performance silicon carbide devices in the global market.
ST's next fab is scheduled to start production in 2026 and reach maximum capacity by 2033, with a peak capacity of up to 15,000 wafers per week. ST's dominance in silicon carbide (SiC) is the result of 25 years of dedicated R&D efforts, backed by a large number of key patents. Catania has historically been an important innovation hub for ST, with the largest SiC R&D facilities and manufacturing activities. This has led to significant advances in the production of improved SiC devices.
