It is reported that Infineon has completed the first phase of the construction of a 200mm silicon carbide (SiC) power wafer fab in Kulim, Malaysia.
The project is part of the Malaysian government's $100 billion plan to increase domestic chip production. The program aims to strengthen Malaysia's position in the global semiconductor industry and make it a leader in the industry. With the Kulim Fab 3 module scheduled to start production in August, SiC production is expected to begin at the end of 2024, marking a significant increase in Infineon's production capacity in the silicon carbide segment. At present, Infineon occupies an important position in the SiC power device market, ranking second only to STMicroelectronics in terms of market share. The completion of this construction is expected to increase production capacity and increase Infineon's market share.
As a new semiconductor material, silicon carbide has a wide range of application prospects in high-power, high-frequency and high-temperature electronic devices due to its excellent electrical and thermal properties. Infineon's fab design is highly adaptable to the requirements of new tools, different production volumes and construction specifications, underlining the company's commitment to technological advancement and its ability to meet the dynamic needs of the market. SiC has 10 times the critical electric field strength of silicon, which enables the use of thinner drift regions in power devices to maintain higher blocking voltages while providing lower forward voltage drop and conduction losses.
Pictured: The first phase of Infineon's 200mm SiC wafer in Kulim is completed
Infineon's silicon carbide fabs offer significant advantages in the industry in that Infineon's silicon carbide products use trench gate technology, which is 1-2 generations ahead of most competitors' planar gate technology. This technology enables Infineon to achieve the same performance with a smaller chip area. In addition, Infineon's patented semi-slotted grid design ensures significant product and durability improvements.
Infineon's competitor Wolfspeed in the silicon carbide wafer segment is also actively deployed, and the two companies have not yet announced specific planned production capacity, but this competition has undoubtedly added an exciting element to the semiconductor field and promoted innovation and progress in the industry. In addition, ST Microelectronics' funding approval for the world's first integrated silicon carbide fab and batch fab in Catania, Italy, also marks a broader trend in the development of silicon carbide technology on a global scale.
The construction of Infineon's Kulim fab is not only an important investment in the company's own development strategy, but also a positive response to the development trend of the semiconductor industry in Malaysia and the world. The completion of the first phase of the construction of 200mm silicon carbide wafers at Infineon's Kulim plant is an important step for Infineon to expand its production capacity and strengthen its market position, while also having a positive impact on the semiconductor industry in Malaysia and globally.
