Texas Instruments announced that its facility in Aizu, Japan, has officially started production of gallium nitride (GaN)-based power semiconductors. By combining its GaN manufacturing facility in Dallas, Texas, TI has now quadrupled the amount of GaN-based power semiconductors it produces in-house, with the Aizu facility gradually coming into production. Samuel Vicari, head of TI Japan, has revealed that TI will mainly invest in the Aizu plant in Fukushima Prefecture to expand production capacity, upgrade GaN semiconductors to the main product of the Aizu factory, and further expand GaN wafer production capacity. It is said that TI's increase in GaN manufacturing capacity in Japan is aimed at expanding in-house production, meeting market demand, leveraging technological advantages, optimizing supply chain management, promoting the application of GaN technology in the consumer electronics field, and achieving environmental benefits.
Benefits of GaN technology
As an alternative to silicon, GaN offers significant advantages in terms of energy efficiency, switching speed, volume and weight of power solutions, overall system cost, and high-temperature and high-pressure performance. GaN chips are able to offer higher power density, i.e., more power in a smaller space, supporting applications such as power adapters for laptops and mobile phones, and smaller, more efficient motors for air conditioners and home appliances.
TI currently offers the broadest portfolio of integrated GaN-based power semiconductors, ranging from low voltage to high voltage for maximum efficiency, reliability, and power density.
Pictured: Texas Instruments employees inspect finished GaN chips (Source; Semiconductor Abstract)
Advanced GaN manufacturing technology
With state-of-the-art GaN chip manufacturing equipment, TI's new manufacturing capacity improves product performance and manufacturing efficiency while providing cost advantages. In addition, TI's more advanced and efficient tools in GaN manufacturing enable the production of smaller chips, enabling higher power packaging. This design innovation means that less water, energy and raw materials can be used in the manufacturing process, and the final product enjoys the same environmental benefits. "With GaN, TI can deliver more power more efficiently in a compact space, which is a key market need that drives innovation for many of our customers," said TI's vice president of high voltage power supplies. As designers of systems such as server power supplies, solar power, and AC/DC adapters are challenged to reduce power consumption and improve energy efficiency, there is a growing need for a reliable supply of TI's high-performance GaN chips. TI's portfolio of integrated GaN power stages enables customers to achieve higher power density, better ease of use, and lower system costs. ”
Scale up for the future
The performance benefits of TI's increased GaN manufacturing capabilities allow the company to scale the voltage of its GaN chips up to 900V and progressively higher to further improve power efficiency and design innovation in applications such as robotics, renewable energy, and server power supplies.
In addition, TI's investment included a successful pilot of a GaN manufacturing process on 300mm wafers earlier this year, which is fully transferable to 300mm technology, giving the company the flexibility to scale to meet customer needs.
Committed to sustainable manufacturing
TI demonstrates its commitment to responsible and sustainable manufacturing by expanding the availability and innovation of GaN technology. TI has made it clear that it plans to achieve 100% renewable electricity in its United States operations by 2027 and the same globally by 2030.
