At the forefront of semiconductor technology in the United States, MACOM Technology Solutions Inc. (hereinafter referred to as "MACOM") is standing at a new starting point. The Lowell, Massachusetts-based company, based on its deep expertise in radio frequency (RF) and microwave applications, was selected by the U.S. Department of Defense to lead a key technology development project to build gallium nitride (GaN) process technology on silicon carbide (SiC). Not only is the project funded by the CHIPS and Science Act, but it is also important for the United States to stay ahead of the global semiconductor race.
1. The strategic significance and objectives of the project
The project, led by MACOM, aims to develop semiconductor fabrication processes for GaN-based materials, particularly monolithic microwave integrated circuits (MMICs) that operate effectively at high voltage and millimeter wave (mmW) frequencies. This is critical to increasing U.S. production capacity in high-frequency, high-power RF and microwave technologies. Funded $3.4 million in the first year, the project is a major investment by the U.S. Department of Defense in the development of domestic microelectronics manufacturing, with the aim of reducing dependence on Asian supply chains and driving domestic technological advancement.
2. MACOM's technical advantages and cooperation
MACOM, as a member of the Common Center for Microelectronics for Wide Bandgap Semiconductors (CLAWS), will collaborate with North Carolina State University (NCSU), NCSU Derived Materials, Inc., and the U.S. Naval Research Laboratory (NRL) on the project. MACOM's technological strength lies in its deep accumulation of GaN-on-SiC process technology, which is also reflected in its financial performance. In the third quarter of fiscal 2024, MACOM's revenue reached $191 million, up 28.3% year-over-year, with data center market revenue up 83.9%, primarily from 400G and 800G high-performance analog data center products.
MACOM's GaN technology, derived from its acquisition of Nitronex, offers higher efficiency, greater power density, and longer lifetime than traditional LDMOS. MACOM's GaN devices are encroaching on the market for LDMOS and SiC-based GaN devices due to their performance, cost, and reliability advantages, and are an important factor driving MACOM's business growth.
Pictured: MACOM was selected by the U.S. Department of Defense to lead a development project to build GaN process technology on silicon carbide
3. Industry impact and future prospects
MACOM's GaN-on-SiC technology has great potential for 5G and 6G mobile infrastructure applications. GaN can bring better RF characteristics and higher output power to RF power amplifiers. MACOM is developing RF GaN-on-Si technology that can be integrated into the standard semiconductor industry, delivering competitive performance while also potentially delivering significant economies of scale.
MACOM's GaN technology has demonstrated significant advantages in cellular applications, providing higher power and efficiency in a smaller package, increasing capacity and reducing costs. Taking China's 4G base stations as an example, if all are replaced with GaN technology, 3 million base stations can save billions of yuan in total costs every year.
4. Summary
The GaN-on-SiC technology development project led by MACOM is not only an important step for the U.S. Department of Defense to invest in the semiconductor field, but also a key step in promoting the development of the domestic high-tech industry. As technology continues to advance and market demand increases, MACOM is expected to continue to play an important role in future RF and microwave applications, providing strong support for U.S. scientific and technological innovation and defense capabilities. The successful implementation of this project will further strengthen MACOM's leadership position in the global semiconductor industry and lead a new direction for the development of global mmWave technology.
