In modern power electronics, improving efficiency and power density is one of the main challenges for designers. Vishay Intertechnology's recently introduced SiRS5700DP, a 150 V TrenchFET® Gen V N-channel power MOSFET, is leading the way in this field with significantly reduced on-resistance and superior thermal performance.
1. Technological innovation and performance improvement
Housed in the advanced PowerPAK® SO-8S package, the SiRS5700DP has the industry's lowest on-resistance (RDS(ON)) of 5.6 mΩ and excels at 10 V. This performance improvement results in a 68.3% reduction in total on-resistance compared to the previous generation. In addition, the on-resistance and gate charge product (FOM) were reduced by 15.4% to 336 mΩ*nC, a key metric that is critical in power conversion applications.
More importantly, the low thermal resistance (RthJC) of the SiRS5700DP is 0.45 °C/W, allowing it to support up to 144 A continuous drain current (ID), which means designers can achieve higher power density in the same space. The continuous drain current has increased by 179% compared to the previous generation, which provides more design flexibility for high-power applications.
2. Reduce the impact of power loss
Reducing on-resistance and thermal resistance has a direct impact on the reduction of power losses. According to Vishay, the SiRS5700DP is designed to significantly reduce conduction losses, which is especially important for power systems that require high efficiency. For example, in a 6 kW AI server power system, the use of SiRS5700DP can effectively improve the overall efficiency of the system and meet the needs of next-generation power supplies.
In practice, the reduction in power loss not only improves the performance of the device, but also extends the life of the device, reduces the need for heat dissipation, and thus reduces the overall system cost. This increase in performance is especially important for high-load applications such as data centers, edge computing, and supercomputers.
Figure：Vishay unveils 150 V TrenchFET® Gen V N channel MOSFET——SiRS5700DP
1. Wide range of applications
The SiRS5700DP has a wide range of applications, including synchronous rectification, DC/DC conversion, hot-swap switches, and OR-ing functions. Specific applications include:
- Servers and data storage: In high-performance computing environments, the SiRS5700DP provides higher energy efficiency and supports faster data processing speeds.
- Telecom power supply: In telecom infrastructure, reducing power consumption and increasing efficiency are key to ensuring quality of service.
- Solar inverter: In the field of renewable energy, the high efficiency of SiRS5700DP can improve energy conversion efficiency.
- Motor drives and power tools: In industrial applications, increasing power density and reducing energy consumption are important means of increasing production efficiency.
2. Environmental protection and reliability
Not only does the SiRS5700DP offer excellent performance, it is also RoHS compliant and halogen-free, 100% Rg and UIS tested to IPC-9701 compliant. These features ensure reliability under temperature cycling, allowing the device to operate reliably in a wide range of environmental conditions.
3. Summary
Vishay's SiRS5700DP MOSFETs mark a major leap forward in power electronics with a 68.3% reduced on-resistance and superior power loss performance. Its wide applicability across multiple applications, combined with its superior environmental and reliability standards, makes it ideal for designers in high-performance power supply designs. As technology continues to advance, the SiRS5700DP will undoubtedly propel the power electronics industry towards higher efficiency and lower energy consumption, laying the foundation for the intelligent power systems of the future.
