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PN Junction

PN Junction power component SIC MOSFET-P3M06060K4

Silicon carbide (SiC) belongs to the third generation of semiconductors. Compared with traditional Si devices, SiC MOSFETs are easier to operate under high-voltage, high-frequency, and high-temperature conditions. Increasing the frequency can reduce the volume of magnetic components and achieve higher power density. PN Junction Plane Type SiC MOSFET has excellent gate oxide layer reliability, and small Rdson offset at high temperature can achieve better high temperature characteristics. This SiC MOSFET is packaged in TO247-4 pins and has a Kelvin pin, which can reduce the impact of source parasitic inductance on the gate circuit, thereby increasing switching speed, reducing switching losses, and improving efficiency. This product has excellent performance; suitable for hard switching; can reduce system volume; improve overall efficiency; automotive-grade device; suitable for bidirectional topology; reduce radiator size; reduce system cost.

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Merchant qualification:

PN Junction Semiconductor (Hangzhou) Co., Ltd. was established in September 2018. It is the country's leading supplier of third-generation semiconductor power devices. It is one of the main members of the International Standards Committee JC-70 meeting and participated in the formulation of wide bandgap semiconductor power devices. international standards.

Product Introduction&Application Fields

product details

Complies with AECQ-101

Ultra small Qgd

Excellent gate oxide reliability

Excellent high temperature characteristics

+15/-3V driver

100%UIS test

Product specifications

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