PN Junction Power component SiC SBD-P3D06010T2

Silicon carbide (SiC) belongs to the third generation of semiconductors. Pioneer's unique SiC Schottky diode structure has a higher withstand voltage level and lower leakage current than traditional Si Schottky diodes, which greatly improves the system efficient, especially suitable for working under high voltage and high frequency conditions, PN Junction company provides a variety of packaging forms to adapt to different application scenarios.

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Merchant qualification:

PN Junction Semiconductor (Hangzhou) Co., Ltd. was established in September 2018. It is the country's leading supplier of third-generation semiconductor power devices. It is one of the main members of the International Standards Committee JC-70 meeting and participated in the formulation of wide bandgap semiconductor power devices. international standards.

Product Introduction&Application Fields

product details

  • Complies with AECQ-101

  • 100%UIS test

  • Minimal reverse recovery loss

  • Excellent high temperature characteristics

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Product-PN Junction power component SiC MODULE-PAAC12400CM
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Product-PN Junction Power component SiC SBD-P3D06002E2
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Product-PN Junction Power component SIC MOSFET-P3M12080K3
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Product-PN Junction Power component SiC SBD-P3D12005K2
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Product-PN Junction power component SiC MODULE-PAIA1250AM
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Product-PN Junction power component SiC MODULE-PAA12400BM3
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Product-PN Junction power component SIC MOSFET-P3M12080K4
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Product-PN Junction Power component SIC MOSFET-P3M12040K4
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Product-PN Junction power component SiC MOSFET-P3M06025K3
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