Chinese

PN Junction

PN Junction Power component SIC MOSFET-P3M12080K3

Silicon carbide (SiC) belongs to the third generation of semiconductors. Compared with traditional Si devices, SiC MOSFETs are easier to operate under high-voltage, high-frequency, and high-temperature conditions. Increasing the frequency can reduce the volume of magnetic components and achieve higher power density. PN Junction Plane Type SiC MOSFET has excellent gate oxide layer reliability, and small Rdson offset at high temperature can achieve better high temperature characteristics. This SiC MOSFET adopts TO247-3 pin package and can directly replace the Si MOSFET in the same package by PIN to PIN, providing a higher cost performance.

Quick inquiry

Congratulations, the submission was successful. Please be patient and wait for us to contact you.

Back

Product quantity

Home > Manufacturer > PN Junction > product details

Merchant qualification:

PN Junction Semiconductor (Hangzhou) Co., Ltd. was established in September 2018. It is the country's leading supplier of third-generation semiconductor power devices. It is one of the main members of the International Standards Committee JC-70 meeting and participated in the formulation of wide bandgap semiconductor power devices. international standards.

Product Introduction&Application Fields

product details

Complies with AECQ-101

Ultra small Qgd

Excellent gate oxide reliability

Excellent high temperature characteristics

+15/-3V driver

100%UIS test

Product specifications

Login

Register

Login

{{codeText}}

Login

{{codeText}}

Submit

Return to login