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PN Junction

PN Junction Power component SiC SBD-P3D06002E2

Silicon carbide (SiC) belongs to the third generation of semiconductors. PN Junction unique SiC Schottky diode structure has a higher withstand voltage level and lower leakage current than traditional Si Schottky diodes, which greatly improves the system High efficiency, especially suitable for working under high voltage and high frequency conditions. At the same time, it solves the problem of the withstand voltage limit and the large reverse recovery loss of Si diodes. The cost of silicon carbide diodes is relatively low and has been widely used. PN Junction provides a variety of packaging forms to adapt to different application scenarios.

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Merchant qualification:

PN Junction Semiconductor (Hangzhou) Co., Ltd. was established in September 2018. It is the country's leading supplier of third-generation semiconductor power devices. It is one of the main members of the International Standards Committee JC-70 meeting and participated in the formulation of wide bandgap semiconductor power devices. international standards.

Product Introduction&Application Fields

product details

Excellent performance

Reduce system size

Improve overall efficiency

Reduce heat dissipation area

Automotive grade devices

Automotive grade devices

Reduce electromagnetic interference

Product specifications

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