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PN Junction

PN Junction power component SIC MOSFET-P3M171K0T3

Easier to operate under high-voltage, high-frequency, and high-temperature conditions. PN Junction planar SiC MOSFETs have excellent gate oxide layer reliability and are durable under high temperatures. A small Rdson offset can achieve better high-temperature characteristics. The 1700V withstand voltage is extremely suitable for auxiliary power supplies connected to the high-voltage bus in many power applications. PN Junction has optimized this SiC MOSFET and can use 0V voltage to turn off. Various The packaging form can directly replace existing high-voltage Si MOSFETs and Si IGBTs directly PIN-to-PIN. This SiC MOSFET adopts TO220-3 pin package and can directly replace the Si MOSFET in the same package by PIN to PIN, providing a higher cost performance.

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Merchant qualification:

PN Junction Semiconductor (Hangzhou) Co., Ltd. was established in September 2018. It is the country's leading supplier of third-generation semiconductor power devices. It is one of the main members of the International Standards Committee JC-70 meeting and participated in the formulation of wide bandgap semiconductor power devices. international standards.

Product Introduction&Application Fields

product details

Complies with AECQ-101

Ultra small Qgd

Excellent gate oxide reliability

Excellent high temperature characteristics

0V shutdown

100%UIS test

Product specifications

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