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INNOSCIENCE

Innoscience 100V enhancement mode gallium nitride power semiconductor INN100W032A

GaN-on-silicon enhancement mode high electron mobility transistor in Solder Bar FCLGA 3.5mm x 2.13mm package.

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Merchant qualification:

INNOSCIENCE is a high-tech enterprise dedicated to the R&D and manufacturing of third-generation semiconductor silicon-based gallium nitride epitaxy and devices. It has adopted the IDM (Integrated Device Manufacture) full industry chain model and established the world's first 8-inch production line with the largest production capacity. GaN-on-Si wafer mass production line. The company's core technical team is composed of many senior international first-class semiconductor experts. We believe that GaN can change the world. Our goal is to provide customers with GaN devices of first-class quality and excellent reliability at a lower price, and to realize the success of GaN technology in the market. wide application.

Product Introduction&Application Fields

product details

  • GaN-on-silicon enhancement mode high electron mobility transistor technology

  • Very low gate charge

  • Very low on-resistance

  • Ultra-small package size

  • Zero reverse recovery charge

Product specifications

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