PN Junction power component SiC MODULE-PAA12400BM3

silicon carbide (SiC) belongs to the third generations semiconductor, 1200V 5.6mΩ module. This SiC Module adopts a 62mm module package. This product has excellent performance; it can reduce the system volume; improve the overall efficiency; reduce the heat dissipation area; automotive-grade devices; reduce system costs; and reduce electromagnetic interference.

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Merchant qualification:

PN Junction Semiconductor (Hangzhou) Co., Ltd. was established in September 2018. It is the country's leading supplier of third-generation semiconductor power devices. It is one of the main members of the International Standards Committee JC-70 meeting and participated in the formulation of wide bandgap semiconductor power devices. international standards.

Product Introduction&Application Fields

product details

  • Complies with AECQ-101

  • 100%UIS test

  • Minimal reverse recovery loss

  • Excellent high temperature characteristics

  • Moisture resistance

  • Excellent cooling capabilities

Product specifications

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Product-PN Junction power component SIC MOSFET-P3M12080K4
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Product-PN Junction Power component SIC MOSFET-P3M12040K4
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Product-PN Junction power component SiC MOSFET-P3M06025K3
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