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INNOSCIENCE

Main products:Third generation semiconductor gallium nitride on silicon epitaxy and devices
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INNOSCIENCE

Main products:Third generation semiconductor gallium nitride on silicon epitaxy and devices

INNOSCIENCE is a high-tech enterprise dedicated to the R&D and manufacturing of third-generation semiconductor silicon-based gallium nitride epitaxy and devices. It has adopted the IDM (Integrated Device Manufacture) full industry chain model and established the world's first 8-inch production line with the largest production capacity. GaN-on-Si wafer mass production line. The company's core technical team is composed of many senior international first-class semiconductor experts. We believe that GaN can change the world. Our goal is to provide customers with GaN devices of first-class quality and excellent reliability at a lower price, and to realize the success of GaN technology in the market. wide application.

INNOSCIENCE's core technical team is composed of experts and veterans in the semiconductor and (power) electronics industries. They all come from world-class leading companies with extensive experience in the development and mass production of GaN-on-Si technology. In addition, in order to demonstrate the potential that INNOSCIENCE has in the field of gallium nitride technology and promote products more smoothly, INNOSCIENCE has also brought together experts in the field of system engineering to develop development boards and products for special applications and customers. Development of other circuit systems.

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