PN Junction

PN Junction Semiconductor (Hangzhou) Co., Ltd. was established in September 2018. It is the country's leading supplier of third-generation semiconductor power devices. It is one of the main members of the International Standards Committee JC-70 meeting and participated in the formulation of wide bandgap semiconductor power devices. international standards.

The founder, Dr. Huang Xing, has focused on the design and development of silicon carbide and gallium nitride power devices since 2009. He studied under the tutelage of IGBT inventor B. Jayant Baliga and thyristor inventor Alex Huang. Dr. Huang Xing has been deeply involved in the field of power devices for more than 10 years, and has released a variety of high-voltage silicon carbide products and multiple invention patents. After the establishment of PN Junction, it took only 3 years to mass-produce a variety of high-voltage MOSFET products, and has always maintained the leading position in the industry.

The third-generation semiconductor device represented by silicon carbide is a revolutionary achievement in the field of power electronics. At present, PN Junction has laid out 70+ intellectual property rights, 27 of which have been authorized, and also masters the full process menu of silicon carbide and gallium nitride, screening test plans and other important technical secrets.

The company's technical team projects have leading product technology and continuous research and development capabilities. The product technology owned by team members is 3-5 years ahead of the domestic lead, among which silicon carbide MOSFET technology fills the domestic gap. The technical team itself has technical knowledge reserves and can complete iterative design and customized development of products according to market customer needs. The sales team has accurate customer resources and complete market sales channels.

The sales team members themselves have fully grasped the domestic and Asia-Pacific region customer resources, including the customer resources of leading international competitors, and complete promotion channels from channel general agents, regional distributors to end customers. The operation team has mass production manufacturing experience and a complete organizational structure resume. The project operation team comes from listed peer companies and has worked for similar companies at home and abroad for many years. The core personnel have more than 10 years of work and management experience in the semiconductor industry. We have extensive network resources in the industry and have potential personnel reserves.

Products of PN Junction include SiC SBD, SiC MOSFET and GaN HEMT, etc., which are widely used in big data centers, supercomputing and blockchain, 5G communication base stations, energy storage/charging piles, micro photovoltaics, intercity high-speed railways and intercity rails Transportation, household appliances, UHV, aerospace, industrial special power supplies, UPS, motor drives and other scenarios and fields. The first 650V GaN power device compatible with driving was completed only 6 months after its establishment; in the same year, the 1200V SiC MOSFET product with Gen3 technology was released, with domestic leading technical indicators; in 2020, the company launched 650V and 1700V SiC MOSFET products, completing the layout of three major product series ; In 2021, the company will launch a full lineup of 650V and 1200V SiC SBD products, enriching the 650V, 1200V, and 1700V SiC MOSFET product lines, and has released more than 100 different models of power devices. Among them, SiC MOSFET products have been successfully introduced into OEMs and Tier 1 manufacturers.