Although silicon carbide (SiC) devices have shown great potential in the field of new energy, China's SiC device industry still faces numerous challenges in the process of domestic development. From a technical perspective, there is still a gap between domestic SiC devices and the world's leading standards in terms of manufacturing processes and quality control, particularly in key areas such as crystal growth, wafer processing, and device fabrication. These technical bottlenecks not only limit the performance improvement of domestically produced SiC devices but also affect their competitiveness in the market.
Furthermore, market acceptance of domestically produced SiC devices still needs to be improved. Currently, more than 90% of the market share for SiC devices in China is controlled by major overseas companies such as Infineon, ROHM, Renesas, ON Semiconductor, and Wolfspeed. This indicates that domestic companies need to strengthen their competitiveness in the international market. To overcome this situation, domestic SiC device manufacturers must increase their investment in research and development, enhance product performance and quality through technological innovation, and at the same time, improve market promotion efforts to boost the confidence and acceptance of downstream companies.
